Low temperature PZT ferroelectric capacitor process for high density capacitor-over-interconnect (COI) FeRAM application

Author

Lung, S.L. ; Chen, S.S. ; Tsai, C.W. ; Sheng, T.T. ; Lia, S.C. ; Liu, C.L. ; Wu, T.B. ; Liu, Rich

Author_Institution

Emerging Central Lab., Macromix Int. Co., Hsinchu, Taiwan

Volume

1

fYear

2001

fDate

2001

Firstpage

692

Abstract

A post metalization PZT capacitor process has been developed for decreasing FeRAM process cost and reducing the process-induced damage to PZT. The process temperature can be lowered to 350°C~400°C by utilizing a conductive perovskite LaNiO₃ (LNO) bottom electrode. The 2Pr of such capacitor is about 28 1 C/cm². Epitaxial grain growth is observed in PZT deposited on LNO and it is responsible for the low temperature crystallization PZT. A COI cell was designed for getting high array density and low process damage and the integration of the COI process has been verified by via chain and PUND test. The PUND test results indicate that the COI cell is suitable for high density and high speed FeRAM application

Keywords

epitaxial layers; ferroelectric capacitors; ferroelectric storage; grain growth; integrated circuit technology; integrated memory circuits; lead compounds; random-access storage; sputter deposition; 350 to 400 degC; FeRAM process cost reduction; PZT epitaxial grain growth; PZT-LaNiO₃; PbZrO3TiO3-LaNiO3; capacitor-over-interconnect FeRAM application; conductive perovskite LaNiO₃ bottom electrode; ferroelectric RAM; high array density; high density FeRAM; high speed FeRAM; low temperature crystallization PZT; low temperature ferroelectric capacitor process; post metalization PZT capacitor process; process-induced damage; random access memory; Capacitors; Costs; Crystallization; Electrodes; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981598

Filename

981598