Multiplexed antenna monitoring test structure [plasma charging damage]

Author

Simon, P.L.C. ; Maly, W. ; Luchies, J.R.M. ; Antheunis, R.

Author_Institution

Philips Semicond., Nijmegen, Netherlands

fYear

1998

fDate

4-5 Jun 1998

Firstpage

205

Lastpage

208

Abstract

A new test structure for measuring charging damage in CMOS transistors has been proposed, fabricated and tested successfully. With this structure, the threshold voltage shift and gate leakage of large numbers of transistors are measured while minimizing measuring time and silicon area overhead for probing pads. The large number of transistors and the large variety of antennas make the structure suitable for detailed study of various charging effects or for monitoring charging in mass IC production

Keywords

CMOS integrated circuits; MOSFET; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; monitoring; surface charging; CMOS transistors; CMOSFET multiplexed antenna monitoring test structure; Si; SiO₂-Si; antennas; charging damage; charging effects; charging monitoring; gate leakage; mass IC production; measuring time; plasma charging damage; probing pads; silicon area overhead; test structure; threshold voltage shift; Antenna measurements; Area measurement; Gate leakage; Mass production; Monitoring; Plasma measurements; Silicon; Testing; Threshold voltage; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

0-9651577-2-5

Type

conf

DOI

10.1109/PPID.1998.725610

Filename

725610