Title :
Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability
Author :
Kosaka, Yukiko ; Eriguchi, Koji ; Yamada, Takayuki
Author_Institution :
Matsushita Electron. Corp., Kyoto, Japan
Abstract :
The gate oxide charging (stressing) mode during plasma processing was investigated from the experimental data of two TDDB measurements, Q bd and tbd testings and the gate current behaviour in tbd testing after the plasma treatment and the post-process current injection (electrical stress). It was confirmed that in some cases the tbd, which determines the oxide lifetime under operating conditions, increases after the plasma treatments in both MERIE (magnetically enhanced RIE) and ICP processing
Keywords :
dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; plasma materials processing; sputter etching; surface charging; ICP processing; MERIE processing; Si; SiO2-Si; TDDB measurements; charge-to-breakdown testing; electrical stress; gate current; gate oxide charging mode; gate oxide charging stress mode; gate oxide reliability; magnetically enhanced RIE; oxide lifetime; plasma processing; plasma treatment; post-process current injection; time-to-breakdown testing; Current measurement; Degradation; Design for quality; Electronic equipment testing; Electrons; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Stress;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725611
