A silicon-based PT/PZT/PT sandwich structure for memory devices

Author

Ren, Tian-Ling ; Zhang, Lin-Tao ; Liu, Jian-She ; Liu, Li-Tian ; Li, Zhi-Jian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

1

fYear

2001

fDate

2001

Firstpage

706

Abstract

High quality ferroelectric capacitor with a PT/PZT/PT sandwich structure prepared by an improved sol-gel method is proposed for FeRAM applications. This novel ferroelectric capacitor has high dielectric constant of about 1200, ultra-low leakage current density of 0.1 nA/cm, high remanent polarization of 20 μC/cm² at coercive field of about 30 kV/cm, and almost fatigue free properties

Keywords

elemental semiconductors; ferroelectric capacitors; ferroelectric storage; lead compounds; leakage currents; permittivity; random-access storage; silicon; sol-gel processing; FeRAM applications; PbTiO3-PbZrO3TiO3-PbTiO3; PbTiO₃-PZT-PbTiO₃; PbTiO₃-PZT-PbTiO₃ sandwich structure; Si; Si-based PT/PZT/PT sandwich structure; ferroelectric RAM; high dielectric constant; high quality ferroelectric capacitor; high remanent polarization; memory devices; sol-gel method; ultra-low leakage current density; Capacitors; Fatigue; Ferroelectric films; Ferroelectric materials; High-K gate dielectrics; Leakage current; Nonvolatile memory; Polarization; Random access memory; Sandwich structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981601

Filename

981601