Title :
Effects of post oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperatures
Author :
Juang, M.H. ; Hwang, C.C. ; Cheng, H.C.
Author_Institution :
Dept. of Electron. Eng, Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Abstract :
This work investigated how oxygen plasma post-treatment improves the leakage characteristics of Pt/(Ba,Sr)TiO3(BST)/Pt capacitors prepared by the RF cosputtering technique. Experimental results indicate that oxygen plasma treatment can effectively passivate the oxygen vacancies of BST films, thus decreasing the electric conduction paths of leakage currents. Via this low-temperature (250 °C) and short duration (~5min) process, the leakage current is reduced by as many as two orders of magnitude. Excellent electrical characteristics, including low leakage current (1.5×10-8 A/cm2) under 0.1 MV/cm, high dielectric constant (288), and greater than 10 year lifetime under 2 MV/cm can be achieved
Keywords :
barium compounds; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; leakage currents; oxygen; passivation; permittivity; plasma materials processing; platinum; sputtered coatings; strontium compounds; 10 year; 250 C; 5 min; BST films; Pt/(Ba,Sr)TiO3/Pt capacitors; Pt/BST/Pt capacitors; RF cosputtering technique; high dielectric constant; leakage characteristics; leakage current reduction; low substrate temperatures; post O plasma treatment; Binary search trees; Capacitors; Electrodes; Leakage current; Oxygen; Plasma properties; Plasma temperature; Radio frequency; Sputtering; Transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981602
