Title :
High power gate turn-off thyristors (GTO´S) and GTO-VVVF inverter
Author :
Kiahi, Keiji ; Kurata, Mamoru ; Jmai, Koji ; Seki, Nagataka
Author_Institution :
Toshiba R & D Center
Abstract :
Three types of high power GTO´s with voltage ratings of 600 to 1300V, and maximum gate turn-off currents of 200 to 600A were developed. Design considerations for realizing these devices will be described. In addition, various results will be demonstrated relating to the development of a VVVF inverter using these devices.
Keywords :
Current density; Inverters; Junctions; Logic gates; Semiconductor process modeling; Thyristors; Transistors;
Conference_Titel :
Power Electronics Specialists Conference, 1977 IEEE
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/PESC.1977.7070828
