Title :
A 17 dBm 64 GHz voltage controlled oscillator with power amplifier in a 0.13 /spl mu/m SiGe BiCMOS technology
Author :
Welch, Brian ; Pfeiffer, Ullrich
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
Abstract :
A 64 GHz voltage controlled oscillator with power amplifier is presented. It uses an LC type oscillator with a capacitively degenerated negative resistance core, and a class AB power amplifier to output 17 dBm of power with a phase noise of -100 dBc/Hz (at 600 kHz). The stand alone oscillator delivers 5 dBm of output power (8 dBm balanced) with phase noise of between -95 dBc/Hz and -100 dBc/Hz (at 600 KHz offset) and 2 GHz tuning range. Separate voltage rails of 4 V, 2 V, and 1 V are provided for the two stages of buffering and core, respectively, for a total power consumption of 130 mW. The PA is a class-AB push-pull amplifier made from two unbalanced cascode amplifiers with 15 dB power gain and 17 dBm saturated output power. The PA operates off the same 4 V rail as the VCO buffer, consuming up to 500 mW of power for power added efficiencies of between 6-10%
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; differential amplifiers; millimetre wave oscillators; millimetre wave power amplifiers; voltage-controlled oscillators; 0.13 micron; 1 V; 130 mW; 15 dB; 2 V; 4 V; 64 GHz; BiCMOS technology; LC type oscillator; SiGe; capacitively degenerated negative resistance core; class AB power amplifier; phase noise; push-pull amplifier; unbalanced cascode amplifiers; voltage controlled oscillator; BiCMOS integrated circuits; Germanium silicon alloys; Phase noise; Power amplifiers; Power generation; Rails; Silicon germanium; Tuning; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651083
