Title :
The surface modification of PTFE film using dielectric barrier discharge of intermittent pulse voltage
Author :
Ishikawa, Seiichiro ; Yukimura, Ken ; Matsunaga, Kaori ; Maruyama, Tetsuhiro
Author_Institution :
Dept. of Electr. Eng., Doshisha Univ., Kyoto, Japan
Abstract :
Summary form only given, as follows. The surface of a poly(tetrafluoroethylene) (PTFE) sheet was modified by using a dielectric barrier (filament) discharge in air at atmospheric pressure. The dielectric barrier discharge was produced by intermittent one-cycle sinusoidal (OCS) voltage with a duration of 10 /spl mu/s and a peak voltage of 8.5 kV. The repetition rate was 20 kHz. The surface of the PTFE film was modified under a lower deposited energy due to thicker silicon rubbers on rolled electrodes, compared to those in a previous study. The PTFE, film was soaked with solutions of H/sub 2/O, B(OH)/sub 3/, H/sub 2/O/sub 2/, and C/sub 2/H/sub 5/OH after the plasma processing. The water contact angles of the films soaked in H/sub 3/BO/sub 3/ and H/sub 2/O/sub 2/ were smaller than that of the film with the plasma processing, while that of the film soaked in C/sub 2/H/sub 5/OH was larger. In addition, the contact angle of the film with only the plasma processing and that of the films soaked in H/sub 2/O and C/sub 2/H/sub 5/OH hardly changed with time, while those of the films soaked in H/sub 3/BO/sub 3/ and H/sub 2/O/sub 2/ largely changed with time. Measurement of XPS spectrum observation indicated that the surface modification of the PTFE film using the barrier discharge was a chemical one.
Keywords :
X-ray photoelectron spectra; discharges (electric); plasma materials processing; polymer films; surface treatment; 1 atm; 8.5 kV; B(OH)/sub 3/; H/sub 2/O; H/sub 2/O/sub 2/; H/sub 3/BO/sub 3/; PTFE film; Si rubbers; XPS spectrum; atmospheric pressure; contact angle; dielectric barrier discharge; dielectric barrier filament discharge; ethanol; intermittent one-cycle sinusoidal voltage; intermittent pulse voltage; plasma processing; poly(tetrafluoroethylene) sheet; rolled electrodes; surface modification; Chemical engineering; Dielectric films; Electrodes; Plasma materials processing; Semiconductor films; Silicon; Surface discharges; Voltage;
Conference_Titel :
Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-5982-8
DOI :
10.1109/PLASMA.2000.855020