A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers

Author

Shi, Bo ; Yan Wah Chia

Author_Institution

Inst. for Infocomm Res., Singapore

fYear

2006

fDate

11-13 June 2006

Abstract

This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UWB) wireless receivers. The LNA uses a circuit topology consisting of two gain stages in multiple feedback loops to achieve broadband flat gain together with low noise figure and good input match. Fabricated in a 0.25 mum SiGe BiCMOS technology, the IC prototype delivers a flat power gain of nominal 20 dB and a noise figure of 2.8-4.7 dB over the entire UWB frequency band, while achieving an input IP3 of -8 dBm. The amplifier occupies only 0.34 mm² chip area and consumes 11 mA from a 2.7 V supply

Keywords

BiCMOS integrated circuits; Ge-Si alloys; feedback amplifiers; low noise amplifiers; microwave amplifiers; microwave receivers; radio receivers; ultra wideband communication; wideband amplifiers; 0.25 micron; 11 mA; 2.7 V; 2.8 to 4.7 dB; 20 dB; 3.1 to 10.6 GHz; BiCMOS technology; RF integrated circuit; SiGe; UWB wireless receivers; circuit topology; feedback amplifier; low-noise amplifier; microwave receivers; multiple feedback loops; ultra-wideband wireless receivers; wideband amplifier; BiCMOS integrated circuits; Circuit topology; Feedback loop; Germanium silicon alloys; Impedance matching; Integrated circuit noise; Low-noise amplifiers; Noise figure; Silicon germanium; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651090

Filename

1651090