Title :
SEMINET: Power Circuit Analysis Including Numerical Semiconductor Device Models
Author_Institution :
General Electric Co., Power Semiconductor Technology Center, Electronics Park, Bldg. 7, Box 2, Syracuse, New York, USA 13221
Abstract :
This paper describes a recently developed computer program called SEMINET (for SEMIconductor NET-work). SEMINET enables user-oriented modeling of electronic circuits including “exact” numerical analysis of power semiconductor circuit elements. Analytical semiconductor device models are also available in addition to the usual complement of passive components and voltage and current sources. Generalized components can also be specified via tabulated I/V relations. A powerful post-processing facility provides for interactive mathematical manipulation and graphical presentation of all simulation results. With SEMINET, large signal circuit behavior and internal device physics can be examined simultaneously. This is particularly important in optimizing power semiconductor devices for a reactive circuit environment. Examples are presented of Insulated Gate Transistor dynamic safe-operating-area studies.
Keywords :
Circuit faults; Integrated circuit modeling; Load modeling; Mathematical model; Numerical models; Transient analysis; Transistors;
Conference_Titel :
Power Electronics Specialists Conference, 1985 IEEE
Conference_Location :
Toulouse, France
DOI :
10.1109/PESC.1985.7070929