Title :
Coupling effects of dual SiGe power amplifiers for 802.11n MIMO applications
Author :
Hua, Wei-Chun ; Lin, Po-Tsung ; Lin, Chun-Ping ; Lin, Che-Yung ; Chang, Huan-Lin ; Liu, Chee Wee ; Yang, Tzu-Yi ; Ma, Gin-Kou
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
The large-signal and small-signal coupling effects of dual SiGe power amplifiers (PAs) on a single chip for 802.11n multiple input multiple output (MIMO) applications are demonstrated for the first time. Deep trench isolation and grounded guard ring are used for crosstalk isolation at both transistor and circuit levels. The equivalent small-signal coupling at 2.45 GHz between two PAs is -30 dB. The PA delivers 18.1 dBm and 16.6 dBm with 3% EVM (OFDM, 64-QAM) in single and dual PA operation modes, respectively. The EVM degradation becomes severe as the relative interfering power level increases
Keywords :
Ge-Si alloys; MIMO systems; UHF power amplifiers; coupled circuits; isolation technology; transceivers; 2.45 GHz; 802.11n MIMO applications; SiGe; coupling effects; crosstalk isolation; deep trench isolation; grounded guard ring; power amplifiers; wireless LAN; Coupling circuits; Crosstalk; Germanium silicon alloys; Isolation technology; Linearity; MIMO; OFDM modulation; Power amplifiers; Silicon germanium; Throughput;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651092
