DocumentCode :
2209158
Title :
The application of power MOSFETs at 10MHz
Author :
Goldberg, Andrew F. ; Kassakian, John G.
Author_Institution :
Laboratory for Electromagnetic and Electronic Systems, Massachusetts Institute of Technology, Cambridge, United States of America
fYear :
1985
fDate :
24-28 June 1985
Firstpage :
91
Lastpage :
100
Abstract :
The design and performance of a 10MHz dc/dc converter is discussed. The behavior of the power MOSFET at this frequency, and the integration of device parasitics into the circuit are described. The performance of a 50W converter is compared with the predictions of a detailed simulation. Losses are analysed and shown to be dominated by MOSFET switching.
Keywords :
Capacitance; Capacitors; Energy storage; Integrated circuit modeling; Logic gates; MOSFET; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1985 IEEE
Conference_Location :
Toulouse, France
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.1985.7070933
Filename :
7070933
Link To Document :
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