Title :
A fully-integrated dual-band MIMO transceiver IC
Author :
Chien, G. ; Leong, P.-B. ; Son, S.W. ; Tsai, M. ; Tse, L.
Author_Institution :
Marvell Semicond. Inc., Santa Clara, CA
Abstract :
A monolithic MIMO transceiver IC consisting of 2 transmitters and 3 receivers is implemented in a 0.35mum SiGe BiCMOS process. The receivers achieve a NF of 4dB in 2.4GHz and 5.5dB in 5GHz; while the transmitters deliver an OP1dB of 11dBm. The MIMO transceiver in full operation consumes approximately 260mA in RX mode and 245mA in TX mode from a 3V supply
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMO systems; monolithic integrated circuits; radiofrequency integrated circuits; transceivers; 0.35 micron; 2.4 GHz; 245 mA; 3 V; 4 dB; 5 GHz; 5.5 dB; BiCMOS process; SiGe; monolithic MIMO transceiver integrated circuit; radiofrequency integrated circuit; wireless LAN; wireless communications; Baseband; BiCMOS integrated circuits; Dual band; Filters; Frequency; MIMO; Silicon germanium; Transceivers; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651096
