A Design of the Bilateral Microwave Transistor Amplifier in the CCITL System

Author

Silapunt, R. ; Torrungrueng, D.

Author_Institution

Dept. of Electron. & Telecommun., King Mongkut´´s Inst. of Technol., Bangkok

fYear

2006

fDate

14-17 Nov. 2006

Firstpage

1

Lastpage

4

Abstract

A design of the bilateral microwave transistor amplifier in the conjugately characteristic-impedance transmission line (CCITL) system using the T-chart is reported. The variations of source and load reflection coefficients with the angle phi that is the argument of the CCITL characteristic impedances are computed using the characteristic conductance (CC) approach under simultaneous conjugate match conditions. The resulting maximum transducer power gain G_T,max is constant with respect to the argument phi. Finally, input and output matching networks are implemented using reciprocal CCITL single-stub shunt tuners

Keywords

electric admittance; impedance matching; microwave amplifiers; microwave transistors; transducers; transmission line theory; tuning; CCITL; T-chart; bilateral microwave transistor amplifier; characteristic conductance approach; characteristic-impedance transmission line system; conjugate match condition; load reflection; maximum transducer power gain; single-stub shunt tuner; Design engineering; Impedance matching; Microwave amplifiers; Microwave technology; Microwave transistors; Power amplifiers; Power transmission lines; Transmission line theory; Tuners; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2006. 2006 IEEE Region 10 Conference

Conference_Location

Hong Kong

Print_ISBN

1-4244-0548-3

Electronic_ISBN

1-4244-0549-1

Type

conf

DOI

10.1109/TENCON.2006.344096

Filename

4142606