Title :
Single polysilicon layer advanced super high-speed BiCMOS technology
Author :
de Jong, J.L. ; Lane, Richard ; van Schravendijk, B. ; Conner, George
Author_Institution :
Signetics Co., Sunnyvale, CA, USA
Abstract :
A single-polysilicon-layer advanced super-high-speed (HS4+) BiCMOS technology which offers 1-μm NMOS and PMOS devices, 13-GHz bipolar npn transistors, lateral pnps, Schottky diodes, polysilicon resistors, lateral fuses, and three layers of Al/Cu interconnect is presented. The key processing steps and the resulting device characteristics are examined with an emphasis on the manufacturability of this technology. The bipolar transistor and CMOS device reliability is discussed
Keywords :
BIMOS integrated circuits; integrated circuit technology; reliability; 1 micron; 13 GHz; Al-Cu interconnect; CMOS device; HS4+; Schottky diodes; advanced super high-speed BiCMOS technology; bipolar npn transistors; bipolar transistor; characteristics; device characteristics; key processing steps; lateral fuses; lateral pnps; manufacturability; polycrystalline Si layer; polysilicon resistors; reliability; single-polysilicon-layer; three layer interconnect; three layer metallisation; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Implants; Resistors; Schottky diodes; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69487
