Title :
60-GHz PA and LNA in 90-nm RF-CMOS
Author :
Yao, Terry ; Gordon, Michael ; Yau, Kenneth ; Yang, M.T. ; Voinigescu, Sorin P.
Author_Institution :
Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
Abstract :
60-GHz power (PA) and low-noise (LNA) amplifiers implemented in a 90-nm RF-CMOS process with thick 9-metal layer copper backend and transistor fT/fmax of 140GHz/170GHz are reported. The PA operates from a 1.5V supply with 5.2dB power gain, a 3-dB bandwidth >13GHz, a P1dBof +6.4dBm with 7% PAE and a saturated output power of +9.3dBm at 60GHz. The LNA features 14.6dB gain, an IIP3 of -6.8dBm, and a simulated NF of 4.5dB, while drawing 16mA from a 1.5V supply. Both circuits employ inductors which reduce the total PA and LNA die sizes to 0.35 times 0.43 mm2 and 0.35 times 0.40 mm2, respectively
Keywords :
CMOS integrated circuits; MMIC power amplifiers; integrated circuit design; low noise amplifiers; radiofrequency integrated circuits; 1.5 V; 14.6 dB; 140 GHz; 16 mA; 170 GHz; 4.5 dB; 5.2 dB; 60 GHz; 90 nm; CMOS millimeter-wave integrated circuits; RF-CMOS; characteristic current densities; low-noise amplifier; noise figure; power amplifier; CMOS technology; Contact resistance; Current density; Germanium silicon alloys; Inductors; Low-noise amplifiers; MOSFET circuits; Millimeter wave measurements; Noise measurement; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651107
