Title :
A 27.7dBm OIP3 SiGe HBT cascode LNA using IM3 cancellation technique
Author :
Ock, Sungmin ; Hong, Seokyong ; Han, Sangwoo ; Lee, Joonsuk
Author_Institution :
Future Commun. IC Inc., Seongnam
Abstract :
A 1.9GHz low noise amplifier(LNA) is implemented with SiGe BiCMOS process using a modified cascode structure. In order to achieve high linearity and low NF at the same time, the phase of IM3 (3rd order inter-modulation) in a common emitter amplifier is derived and the new IM3 cancellation method is proposed. The measurement results of the LNA at 1930MHz are gain of 16.9dB, noise figure of 1.5dB, and OIP3 of 27.7dBm with a single 2.7V supply. It consumes only 4.4mA
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; bipolar integrated circuits; low noise amplifiers; 1.5 dB; 16.9 dB; 1930 MHz; 2.7 V; 4.4 mA; BiCMOS process; HBT cascode LNA; IM3 cancellation; common emitter amplifier; low noise amplifier; third order inter-modulation; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Low-noise amplifiers; Noise cancellation; Noise figure; Noise measurement; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651109
