Impedance optimization of linearizer to suppress intermodulation distortion in 2.45GHz SiGe WLAN power amplifier

Author

Kim, Ji Hoon ; Kim, Ki Young ; Won, Seung Hwan ; Lee, Jae Jin ; Park, Yun Hwi ; Jung, Yul Kyo ; Kim, Seok Tae ; Park, Chul Soon

Author_Institution

Sch. of Eng., Inf. & Commun. Univ., Daejeon

fYear

2006

fDate

11-13 June 2006

Abstract

An RF power amplifier (PA) for IEEE 802.11g WLAN terminals is implemented with 33 GHz-f_T, 0.8-mum-SiGe bipolar technology. This paper demonstrates a linearizer consisting of a varactor diode and a base-emitter junction diode of a bias transistor. Intermodulation distortion (IMD) is suppressed by optimized impedance of the linearizer. The reactance of the varactor diode is minimized at low output power level to eliminate IMD3, and maximized near 1-dB compression point (P1dB). IMD3 is improved as much as 0.2~6 dB up to 20 dBm output power. The IMD3 value is less than -34 dBc at 3 dB back-off from P1dB. The power amplifier exhibits P1dB of 24 dBm, with power-added efficiency (PAE) of 31%, and power gain of 17 dB under 3.3V power supply

Keywords

Ge-Si alloys; bipolar integrated circuits; intermodulation distortion; microwave power amplifiers; radiofrequency amplifiers; varactors; wireless LAN; 0.8 micron; 17 dB; 2.45 GHz; 3.3 V; 33 GHz; IEEE 802.11g WLAN terminals; RF power amplifier; SiGe; WLAN power amplifier; base-emitter junction diode; bias transistor; bipolar technology; impedance optimization; intermodulation distortion; linearizer; varactor diode; Diodes; Germanium silicon alloys; Impedance; Intermodulation distortion; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon germanium; Varactors; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651113

Filename

1651113