Title :
Low-loss high speed switching device, 2500V–300A Static Induction Thyristor
Author :
Nishizawa, J. ; Muraoka, K. ; Kawamura, Y. ; Tamamushi, T.
Author_Institution :
Research Institute of Electrical Communication, Tohoku University, Sendai 980, JAPAN
Abstract :
An anode-emitter-shorted type 2500V–300A buried-gate Static Induction Thyristor is fabricated and resulted in the very high speed turn-on time of 2.0µS and turn-off time of 3.1/µs both at the 1000A, and in the very low-loss performance due to the reduction of the tailing current. The switching-loss and the conduction-loss of the high power Static Induction Thyristor is for the first time evaluated in this paper. The snubber-circuit-less operation is firstly demonstrated for the high power Static Induction Thyristor.
Keywords :
Anodes; Current measurement; Logic gates; Silicon; Switches; Thyristors; Voltage measurement;
Conference_Titel :
Power Electronics Specialists Conference, 1985 IEEE
Conference_Location :
Toulouse, France
DOI :
10.1109/PESC.1985.7070955