DocumentCode
2209707
Title
A new very high voltage semiconductor switch
Author
Sundberg, Gale R.
Author_Institution
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135, USA
fYear
1985
fDate
24-28 June 1985
Firstpage
273
Lastpage
279
Abstract
A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of ten higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.
Keywords
Anodes; Impurities; Logic gates; Optical switches; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1985 IEEE
Conference_Location
Toulouse, France
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1985.7070957
Filename
7070957
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