Title :
A new very high voltage semiconductor switch
Author :
Sundberg, Gale R.
Author_Institution :
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135, USA
Abstract :
A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of ten higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.
Keywords :
Anodes; Impurities; Logic gates; Optical switches; Silicon;
Conference_Titel :
Power Electronics Specialists Conference, 1985 IEEE
Conference_Location :
Toulouse, France
DOI :
10.1109/PESC.1985.7070957
