DocumentCode
2209726
Title
Instabilities in low pressure inductive discharges with attaching gases
Author
Lieberman, M.A. ; Lichtenberg, A.J. ; Marakhtanov, A.M. ; Chabert, P. ; Tuszcwski, M.
Author_Institution
California Univ., Berkeley, CA, USA
fYear
2000
fDate
4-7 June 2000
Firstpage
226
Abstract
Summary form only given, as follows. Plasma instabilities have been observed in low pressure inductive processing discharges with attaching gases. For SF/sub 6/, instability windows in pressure and driving power have been explored for gas pressures between 2.5 and 100 mTorr and absorbed powers between 150 and 900 W. For most pressures increasing power is required to obtain the instability with increasing pressure, with the frequency of the instability increasing with pressure, mainly lying between 10 and 100 kHz. A volume-averaged (global) model of the instability has been developed, considering idealized inductive and capacitive energy deposition. As pressure or power are varied to cross a threshold, the instability is born at a Hopf bifurcation, with relaxation oscillations between inductive and capacitive modes causing modulations of charged particle densities, electron temperature, and plasma potential. The theoretical predictions are in qualitative agreement with experimental observations. SF/sub 6//argon mixtures have also been investigated, obtaining the instability bounds and frequencies. The experimental results and comparison with theory are presented.
Keywords
argon; bifurcation; discharges (electric); plasma density; plasma instability; plasma oscillations; plasma pressure; plasma temperature; sulphur compounds; 10 to 100 kHz; 150 to 900 W; 2.5 to 100 mtorr; Ar-SF/sub 6/; Hopf bifurcation; SF/sub 6/; SF/sub 6//Ar mixtures; absorbed powers; attaching gases; capacitive energy deposition; capacitive modes; charged particle densities; driving power; electron temperature; gas pressures; global model; increasing pressure; inductive energy deposition; inductive modes; instabilities; instability; instability windows; low pressure inductive discharges; low pressure inductive processing discharges; plasma potential; pressure; relaxation oscillations; volume-averaged model; Argon; Electrons; Frequency; Gases; Ionization; Joining processes; Plasma density; Plasma materials processing; Plasma measurements; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
Conference_Location
New Orleans, LA, USA
ISSN
0730-9244
Print_ISBN
0-7803-5982-8
Type
conf
DOI
10.1109/PLASMA.2000.855052
Filename
855052
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