• DocumentCode
    2209726
  • Title

    Instabilities in low pressure inductive discharges with attaching gases

  • Author

    Lieberman, M.A. ; Lichtenberg, A.J. ; Marakhtanov, A.M. ; Chabert, P. ; Tuszcwski, M.

  • Author_Institution
    California Univ., Berkeley, CA, USA
  • fYear
    2000
  • fDate
    4-7 June 2000
  • Firstpage
    226
  • Abstract
    Summary form only given, as follows. Plasma instabilities have been observed in low pressure inductive processing discharges with attaching gases. For SF/sub 6/, instability windows in pressure and driving power have been explored for gas pressures between 2.5 and 100 mTorr and absorbed powers between 150 and 900 W. For most pressures increasing power is required to obtain the instability with increasing pressure, with the frequency of the instability increasing with pressure, mainly lying between 10 and 100 kHz. A volume-averaged (global) model of the instability has been developed, considering idealized inductive and capacitive energy deposition. As pressure or power are varied to cross a threshold, the instability is born at a Hopf bifurcation, with relaxation oscillations between inductive and capacitive modes causing modulations of charged particle densities, electron temperature, and plasma potential. The theoretical predictions are in qualitative agreement with experimental observations. SF/sub 6//argon mixtures have also been investigated, obtaining the instability bounds and frequencies. The experimental results and comparison with theory are presented.
  • Keywords
    argon; bifurcation; discharges (electric); plasma density; plasma instability; plasma oscillations; plasma pressure; plasma temperature; sulphur compounds; 10 to 100 kHz; 150 to 900 W; 2.5 to 100 mtorr; Ar-SF/sub 6/; Hopf bifurcation; SF/sub 6/; SF/sub 6//Ar mixtures; absorbed powers; attaching gases; capacitive energy deposition; capacitive modes; charged particle densities; driving power; electron temperature; gas pressures; global model; increasing pressure; inductive energy deposition; inductive modes; instabilities; instability; instability windows; low pressure inductive discharges; low pressure inductive processing discharges; plasma potential; pressure; relaxation oscillations; volume-averaged model; Argon; Electrons; Frequency; Gases; Ionization; Joining processes; Plasma density; Plasma materials processing; Plasma measurements; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
  • Conference_Location
    New Orleans, LA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-5982-8
  • Type

    conf

  • DOI
    10.1109/PLASMA.2000.855052
  • Filename
    855052