DocumentCode :
2209889
Title :
Advanced ECL with new active pull-down emitter-followers
Author :
Itoh, Hiroyuki ; Saitoh, Tatsuya ; Yamada, Toshio ; Yamamoto, Masakazu ; Masaki, Akira
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fYear :
1988
fDate :
12-13 Sep 1988
Firstpage :
23
Lastpage :
25
Abstract :
Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs
Keywords :
bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; logic gates; ECL; GaAs; LSIs; active pull-down emitter-followers; bipolar logic gates; capacitive loads; driving capability; Bipolar transistors; Delay effects; FETs; Gallium arsenide; High performance computing; Logic arrays; Logic circuits; Logic gates; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
Type :
conf
DOI :
10.1109/BIPOL.1988.51036
Filename :
51036
Link To Document :
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