DocumentCode
2209889
Title
Advanced ECL with new active pull-down emitter-followers
Author
Itoh, Hiroyuki ; Saitoh, Tatsuya ; Yamada, Toshio ; Yamamoto, Masakazu ; Masaki, Akira
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1988
fDate
12-13 Sep 1988
Firstpage
23
Lastpage
25
Abstract
Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs
Keywords
bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; logic gates; ECL; GaAs; LSIs; active pull-down emitter-followers; bipolar logic gates; capacitive loads; driving capability; Bipolar transistors; Delay effects; FETs; Gallium arsenide; High performance computing; Logic arrays; Logic circuits; Logic gates; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1988.51036
Filename
51036
Link To Document