A highly linear SiGe double-balanced mixer for 77 GHz automotive radar applications

Author

Dehlink, B. ; Wohlmuth, H.-D. ; Forstner, H. -P ; Knapp, H. ; Trotta, S. ; Aufinger, K. ; Meister, T.F. ; Böck, J. ; Scholtz, A.L.

Author_Institution

Vienna Univ. of Technol.

fYear

2006

fDate

11-13 June 2006

Abstract

An active double-balanced mixer for automotive applications in the 77 GHz range is presented. The circuit includes on-chip baluns both at the RF and the LO port. The mixer was designed and fabricated in a 200 GHz f_T SiGe:C bipolar technology. The chip was characterized by on-wafer measurements. At 77 GHz, the conversion gain of the mixer is 11.5 dB. The single sideband noise figure at 77 GHz is 15.8 dB. The input-referred 1 dB compression point at 75 GHz is -0.3 dBm. Measurements across the wafer verified that this mixer circuit is robust against wafer inhomogeneities. The size of the chip is 700mum times 900mum. The circuit was designed for a supply voltage of 5.5 V and draws 75 mA

Keywords

Ge-Si alloys; baluns; bipolar integrated circuits; carbon; millimetre wave mixers; road vehicle radar; 11.5 dB; 15.8 dB; 200 GHz; 5.5 V; 700 micron; 75 mA; 77 GHz; 900 micron; SiGe:C; automotive radar; bipolar technology; double-balanced mixer; on-chip baluns; on-wafer measurements; Automotive applications; Automotive engineering; Circuits; Germanium silicon alloys; Impedance matching; Noise figure; Radar applications; Radio frequency; Semiconductor device measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651127

Filename

1651127