Title :
Radiation-induced surface leakage currents in silicon microstrip detectors
Author :
Foland, A.D. ; Alexander, J.P.
Author_Institution :
Newman Lab., Cornell Univ., Ithaca, NY, USA
Abstract :
After exposure to X-rays and UV light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO2 interfacial area. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The scaled damage rate is measured to be 5±1 nA/cm2/kRad for 20 keV X-rays
Keywords :
X-ray effects; elemental semiconductors; leakage currents; position sensitive particle detectors; radiation effects; silicon; silicon radiation detectors; 20 keV; CLEO III; Si microstrip detectors; Si-SiO2; Si-SiO2 interfacial area; UV light effects; X-ray effects; radiation-induced surface leakage currents; scaled damage rate; Aluminum; Electrodes; Implants; Leak detection; Leakage current; Microstrip; Radiation detectors; Silicon radiation detectors; Strips; Testing;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3180-X
DOI :
10.1109/NSSMIC.1995.510365
