Title :
Characterization of RBSOA of high power bipolar transistors using a nondestructive tester
Author :
Jovanovic, Milan M. ; Lee, Fred C. ; Chen, Dan Y.
Author_Institution :
Department of Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, 24061, U.S.A.
Abstract :
Reverse-bias safe operating area (RBSOA) of high power Darlington transistors are characterized using a 120A/1000V nondestructive reverse-bias second breakdown tester designed and fabricated at VPI&SU. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.
Keywords :
Electric breakdown; Power transistors; Shunts (electrical); Temperature measurement; Testing; Transistors; Voltage measurement;
Conference_Titel :
Power Electronics Specialists Conference, 1985 IEEE
Conference_Location :
Toulouse, France
DOI :
10.1109/PESC.1985.7070979
