• DocumentCode
    2210250
  • Title

    Mechanisms of Polythiophene Chemical Sensors

  • Author

    Li, Bo ; Lambeth, David N.

  • Author_Institution
    Carnegie Mellon Univ., Pittsburgh
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    1330
  • Lastpage
    1333
  • Abstract
    Chemical sensors based upon regioregular polythiophene thin-film transistors (TFT) are studied for their chemical sensing properties to volatile organic compound vapors. The sensing properties are found to be highly dependent upon the TFT operating conditions. As the applied gate voltage is varied the source-drain current response can differ both in sign and magnitude for the same analyte. This implies that multiple sensing mechanisms co-exist. Here, we propose that the two main sensing mechanisms are mainly due to a dipole interaction effect, which occurs inside the crystallites and yields a positive response, and a grain boundary (GB) effect, which yields a negative response.
  • Keywords
    chemical sensors; organic compounds; thin film transistors; chemical sensing property; multiple sensing mechanism; polythiophene chemical sensor mechanism; regioregular polythiophene thin-film transistors; volatile organic compound vapor; Chemical sensors; Crystallization; Current measurement; Gas detectors; Grain boundaries; Nitrogen; Polymers; Thin film transistors; Volatile organic compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2007 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-1261-7
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2007.4388656
  • Filename
    4388656