Title :
Mechanisms of Polythiophene Chemical Sensors
Author :
Li, Bo ; Lambeth, David N.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh
Abstract :
Chemical sensors based upon regioregular polythiophene thin-film transistors (TFT) are studied for their chemical sensing properties to volatile organic compound vapors. The sensing properties are found to be highly dependent upon the TFT operating conditions. As the applied gate voltage is varied the source-drain current response can differ both in sign and magnitude for the same analyte. This implies that multiple sensing mechanisms co-exist. Here, we propose that the two main sensing mechanisms are mainly due to a dipole interaction effect, which occurs inside the crystallites and yields a positive response, and a grain boundary (GB) effect, which yields a negative response.
Keywords :
chemical sensors; organic compounds; thin film transistors; chemical sensing property; multiple sensing mechanism; polythiophene chemical sensor mechanism; regioregular polythiophene thin-film transistors; volatile organic compound vapor; Chemical sensors; Crystallization; Current measurement; Gas detectors; Grain boundaries; Nitrogen; Polymers; Thin film transistors; Volatile organic compounds; Voltage;
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2007.4388656