DocumentCode
2210250
Title
Mechanisms of Polythiophene Chemical Sensors
Author
Li, Bo ; Lambeth, David N.
Author_Institution
Carnegie Mellon Univ., Pittsburgh
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
1330
Lastpage
1333
Abstract
Chemical sensors based upon regioregular polythiophene thin-film transistors (TFT) are studied for their chemical sensing properties to volatile organic compound vapors. The sensing properties are found to be highly dependent upon the TFT operating conditions. As the applied gate voltage is varied the source-drain current response can differ both in sign and magnitude for the same analyte. This implies that multiple sensing mechanisms co-exist. Here, we propose that the two main sensing mechanisms are mainly due to a dipole interaction effect, which occurs inside the crystallites and yields a positive response, and a grain boundary (GB) effect, which yields a negative response.
Keywords
chemical sensors; organic compounds; thin film transistors; chemical sensing property; multiple sensing mechanism; polythiophene chemical sensor mechanism; regioregular polythiophene thin-film transistors; volatile organic compound vapor; Chemical sensors; Crystallization; Current measurement; Gas detectors; Grain boundaries; Nitrogen; Polymers; Thin film transistors; Volatile organic compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2007 IEEE
Conference_Location
Atlanta, GA
ISSN
1930-0395
Print_ISBN
978-1-4244-1261-7
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.4388656
Filename
4388656
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