A fully integrated 3-band OFDM UWB transceiver in 0.25/spl mu/m SiGe BiCMOS

Author

Bergervoet, J. ; Kundur, H. ; Leenaerts, D.M.W. ; van de Beek, R.C.H. ; Roovers, R. ; van der Weide, G. ; Waite, H. ; Aggarwal, S.

Author_Institution

Philips Res., Eindhoven

fYear

2006

fDate

11-13 June 2006

Lastpage

268

Abstract

A fully integrated transceiver for 3-band OFDM UWB is presented. It has been implemented in a 0.25mum SiGe BiCMOS process, and has a die area of less than 4mm2. The power consumption is 47mA, 43mA, and 27mA at 2.7V supply for receiver, transmitter, and synthesizer respectively. The chip features DC offset cancellation, a loop-back test mode, a single input/output pin for antenna connection, a 1GHz baseband clock output and is robust against interferers from cellular and ISM bands. The measured EVM is 8%, while the overall NF is 4.5dB and the iIP3 is -6dBm

Keywords

BiCMOS integrated circuits; Ge-Si alloys; OFDM modulation; transceivers; ultra wideband communication; 0.25 micron; 1 GHz; 2.7 V; 27 mA; 4.5 dB; 43 mA; 47 mA; BiCMOS process; DC offset cancellation; ISM bands; OFDM ultra wideband transceiver; SiGe; antenna connection; baseband clock output; cellular bands; loop-back test mode; single input/output pin; Baseband; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; OFDM; Silicon germanium; Synthesizers; Testing; Transceivers; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651142

Filename

1651142