A Schottky barrier diode ultra-wideband amplitude modulation (AM) detector in foundry CMOS technology

Author

Sankaran, Swaminathan ; Kenneth KO

Author_Institution

Dept of Electr. & Comput. Eng., Florida Univ., Gainesville, FL

fYear

2006

fDate

11-13 June 2006

Abstract

Utility of Schottky diodes fabricated in foundry digital 130-nm CMOS technology is demonstrated by implementing an ultra-wideband (UWB) amplitude modulation detector consisting of a low noise amplifier (LNA), a Schottky diode rectifier, and a low-pass filter. The detector is matched to 50 Omega, from 0-10.3 GHz and 0-1.7 GHz at the input and output, respectively and almost covers the entire UWB frequency range (3.1-10.7 GHz). The measured peak conversion gain is -2.2 dB, the sensitivity over the band is between -53 and -56 dBm, and power consumption is only 8.5 mW

Keywords

CMOS integrated circuits; Schottky diodes; amplitude modulation; detector circuits; low-pass filters; microwave integrated circuits; rectifiers; ultra wideband communication; 0 to 10.3 GHz; 130 nm; 2.2 dB; 50 ohm; 8.5 mW; Schottky barrier diode; Schottky diode rectifier; foundry CMOS technology; low noise amplifier; low pass filter; ultra-wideband amplitude modulation detector; Acoustical engineering; Amplitude modulation; CMOS technology; Detectors; Foundries; Low-noise amplifiers; Noise level; Schottky barriers; Schottky diodes; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651144

Filename

1651144