Title :
Fully integrated receiver front-ends for cell-phones in deep submicron CMOS
Author :
Svelto, Francesco
Author_Institution :
Universita degli Studi di Pavia
Abstract :
Leveraging an in-depth analysis of second order inter-modulation distortion in CMOS active mixers, this paper discusses techniques to improve the dynamic range of direct conversion fully integrated RF front-ends. Particular attention is dedicated to low voltage aspects for compatibility with future technology nodes. Integrated circuits solutions, tailored to UMTS and GSM, have been realized and experiments show specifications are met with margin
Keywords :
CMOS integrated circuits; mixers (circuits); radio receivers; radiofrequency integrated circuits; CMOS active mixers; cell phones; deep submicron CMOS; fully integrated receiver front-ends; intermodulation distortion; 3G mobile communication; Circuits; Dynamic range; GSM; Low voltage; Mixers; RF signals; Radio frequency; Resistors; Transconductors;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651146
