DocumentCode
2210382
Title
Fully integrated receiver front-ends for cell-phones in deep submicron CMOS
Author
Svelto, Francesco
Author_Institution
Universita degli Studi di Pavia
fYear
2006
fDate
11-13 June 2006
Abstract
Leveraging an in-depth analysis of second order inter-modulation distortion in CMOS active mixers, this paper discusses techniques to improve the dynamic range of direct conversion fully integrated RF front-ends. Particular attention is dedicated to low voltage aspects for compatibility with future technology nodes. Integrated circuits solutions, tailored to UMTS and GSM, have been realized and experiments show specifications are met with margin
Keywords
CMOS integrated circuits; mixers (circuits); radio receivers; radiofrequency integrated circuits; CMOS active mixers; cell phones; deep submicron CMOS; fully integrated receiver front-ends; intermodulation distortion; 3G mobile communication; Circuits; Dynamic range; GSM; Low voltage; Mixers; RF signals; Radio frequency; Resistors; Transconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-9572-7
Type
conf
DOI
10.1109/RFIC.2006.1651146
Filename
1651146
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