Nano-CMOS Technology for Next Fifteen Years

Author

Iwai, Hiroshi ; Wong, Hei

Author_Institution

Frontier Collaborative Res. Center, Tokyo Inst. of Technol.

fYear

2006

fDate

14-17 Nov. 2006

Firstpage

1

Lastpage

4

Abstract

Complementary metal-oxide-semiconductor (CMOS) technology has been developed into the sub-100 nm range. It is expected that the nano-CMOS technology will govern the IC manufacturing for at least another couple of decades. Though there are many challenges ahead, further down-sizing the device to a few nanometers is still on the schedule of International Technology Roadmap for Semiconductors (ITRS). Several technological options for manufacturing nano-CMOS microchips are available or will soon be available. This paper reviews the challenges of nano-CMOS downsizing and manufacturing. We shall focus on the recent progresses on the key technologies for the nano-CMOS IC fabrication in the next fifteen years

Keywords

CMOS integrated circuits; integrated circuit manufacture; nanotechnology; IC fabrication; IC manufacturing; ITRS; International Technology Roadmap for Semiconductors; nano-CMOS microchip; nanoCMOS technology; CMOS technology; Collaboration; Coupling circuits; Electron tubes; Job shop scheduling; Power generation economics; Production; Semiconductor device manufacture; Transistors; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2006. 2006 IEEE Region 10 Conference

Conference_Location

Hong Kong

Print_ISBN

1-4244-0548-3

Electronic_ISBN

1-4244-0549-1

Type

conf

DOI

10.1109/TENCON.2006.343728

Filename

4142660