DocumentCode :
2210390
Title :
Nano-CMOS Technology for Next Fifteen Years
Author :
Iwai, Hiroshi ; Wong, Hei
Author_Institution :
Frontier Collaborative Res. Center, Tokyo Inst. of Technol.
fYear :
2006
fDate :
14-17 Nov. 2006
Firstpage :
1
Lastpage :
4
Abstract :
Complementary metal-oxide-semiconductor (CMOS) technology has been developed into the sub-100 nm range. It is expected that the nano-CMOS technology will govern the IC manufacturing for at least another couple of decades. Though there are many challenges ahead, further down-sizing the device to a few nanometers is still on the schedule of International Technology Roadmap for Semiconductors (ITRS). Several technological options for manufacturing nano-CMOS microchips are available or will soon be available. This paper reviews the challenges of nano-CMOS downsizing and manufacturing. We shall focus on the recent progresses on the key technologies for the nano-CMOS IC fabrication in the next fifteen years
Keywords :
CMOS integrated circuits; integrated circuit manufacture; nanotechnology; IC fabrication; IC manufacturing; ITRS; International Technology Roadmap for Semiconductors; nano-CMOS microchip; nanoCMOS technology; CMOS technology; Collaboration; Coupling circuits; Electron tubes; Job shop scheduling; Power generation economics; Production; Semiconductor device manufacture; Transistors; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2006. 2006 IEEE Region 10 Conference
Conference_Location :
Hong Kong
Print_ISBN :
1-4244-0548-3
Electronic_ISBN :
1-4244-0549-1
Type :
conf
DOI :
10.1109/TENCON.2006.343728
Filename :
4142660
Link To Document :
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