DocumentCode :
2210422
Title :
Preparation and Applications of Nanocrystalline Silicon Devices
Author :
Oda, Shunri
Author_Institution :
Tokyo Inst. of Technol.
fYear :
2006
fDate :
14-17 Nov. 2006
Firstpage :
1
Lastpage :
4
Abstract :
Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible photoluminescence and electron emission. Electron transport and photonic properties of silicon nanocrystals prepared by plasma processes are described with particular emphasis on fabrication of monodispersed silicon nanocrystals, high-density assembly of silicon quantum dots, silicon nanodot memory, NEMS devices, and silicon photonic devices
Keywords :
nanostructured materials; nanotechnology; semiconductor quantum dots; NEMS device; fabrication technology; monodispersed silicon nanocrystal; nanostructure; optical property; plasma processes; silicon photonic device; silicon quantum dots; Electron emission; Electron optics; Nanocrystals; Nanoscale devices; Nanostructures; Optical device fabrication; Plasma properties; Quantum dots; Silicon devices; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2006. 2006 IEEE Region 10 Conference
Conference_Location :
Hong Kong
Print_ISBN :
1-4244-0548-3
Electronic_ISBN :
1-4244-0549-1
Type :
conf
DOI :
10.1109/TENCON.2006.343729
Filename :
4142661
Link To Document :
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