An integrated approach to Mos-gated power semiconductor manufacturing based on cleaner production technologies for waste minimization by design

Author

Anderson, Samuel ; Balkau, F. ; Gurkok, C.

Author_Institution

Semicond. Products Sector, Motorola Inc., Phoenix, AZ, USA

fYear

1994

fDate

2-4 May 1994

Firstpage

230

Lastpage

237

Abstract

MOS-gated power semiconductors are enabling technologies for “efficient end-use” power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed

Keywords

design engineering; energy conservation; insulated gate bipolar transistors; power consumption; power conversion; power convertors; power transistors; semiconductor device manufacture; CO₂; IBGTs; MOS-gated power semiconductors; clean production processes; design; efficient end-use; emissions; energy saving; fossil fuel; manufacturing; power conversion; primary energy source; waste minimization; Carbon dioxide; Computer industry; Electronics industry; Energy consumption; Fossil fuels; Manufacturing industries; Power generation; Production; Semiconductor device manufacture; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and the Environment, 1994. ISEE 1994., Proceedings., 1994 IEEE International Symposium on

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-1769-6

Type

conf

DOI

10.1109/ISEE.1994.337252

Filename

337252