DocumentCode :
2210530
Title :
An analytical method to determine MOSFET´s high frequency noise parameters from 50-/spl Omega/ noise figure measurements
Author :
Asgaran, Saman ; Deen, M. Jamal ; Chen, Chih-Hung
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont.
fYear :
2006
fDate :
11-13 June 2006
Lastpage :
304
Abstract :
An analytical method, along with closed-form solutions, for extracting MOSFET´s RF noise parameters is presented. This method extracts the minimum noise figure, NFmin equivalent noise resistance, Rn, and optimum source admittance Yopt, of MOSFET directly from a single high frequency 50-Omega noise figure measurement. This method can accurately predict the noise parameters of deep-submicron MOSFETs
Keywords :
MOSFET; electric noise measurement; semiconductor device measurement; semiconductor device noise; 50 ohm; MOSFET; RF noise parameters; equivalent noise resistance; high frequency noise parameters; minimum noise figure; noise figure measurements; optimum source admittance; Analytical models; Circuit noise; Electrical resistance measurement; Frequency measurement; Impedance; MOSFET circuits; Noise figure; Noise generators; Noise measurement; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
Type :
conf
DOI :
10.1109/RFIC.2006.1651151
Filename :
1651151
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2210530
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