• DocumentCode
    2210530
  • Title

    An analytical method to determine MOSFET´s high frequency noise parameters from 50-/spl Omega/ noise figure measurements

  • Author

    Asgaran, Saman ; Deen, M. Jamal ; Chen, Chih-Hung

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont.
  • fYear
    2006
  • fDate
    11-13 June 2006
  • Lastpage
    304
  • Abstract
    An analytical method, along with closed-form solutions, for extracting MOSFET´s RF noise parameters is presented. This method extracts the minimum noise figure, NFmin equivalent noise resistance, Rn, and optimum source admittance Yopt, of MOSFET directly from a single high frequency 50-Omega noise figure measurement. This method can accurately predict the noise parameters of deep-submicron MOSFETs
  • Keywords
    MOSFET; electric noise measurement; semiconductor device measurement; semiconductor device noise; 50 ohm; MOSFET; RF noise parameters; equivalent noise resistance; high frequency noise parameters; minimum noise figure; noise figure measurements; optimum source admittance; Analytical models; Circuit noise; Electrical resistance measurement; Frequency measurement; Impedance; MOSFET circuits; Noise figure; Noise generators; Noise measurement; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-9572-7
  • Type

    conf

  • DOI
    10.1109/RFIC.2006.1651151
  • Filename
    1651151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2210530