Title :
Investigation of the excitation of ion beams in the explosive mode emission of semiconductors
Author :
Denisou, V.P. ; Egorov, N.V. ; Prudnikov, A.P.
Author_Institution :
Fac. of Appl. Math. & Control Processes, St. Petersburg State Univ., Russia
Abstract :
We investigated the possibility of ion beam production at germanium and silicon tips with micro- and millisecond pulses. The results of the experiments show that semiconducting tips are promising for ion beam production. The modes of exploitation, in which reproducible amplitudes of the ion current pulses are obtained, are discussed
Keywords :
elemental semiconductors; explosions; germanium; ion beams; ion emission; ion sources; pulse generators; silicon; Ge; Muller type projectors; Si; elemental semiconductors; explosive ion emission; explosive mode emission; ion beam production; ion beams excitation; ion current pulses; microsecond pulses; millisecond pulses; negative voltage pulse influence; pulsed field ion emission; reproducible amplitudes; semiconducting tips; surface melting; Doping; Explosives; Germanium; Ion beams; Ion emission; Production; Pulse generation; Silicon; Sputtering; Voltage;
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 1996. Proceedings. ISDEIV., XVIIth International Symposium on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-2906-6
DOI :
10.1109/DEIV.1996.545464
