Title :
Heteroface bipolar transistor based on bandgap narrowing in p+ -GaAs
Author :
Klausmeier-Brown, M.E. ; Dodd, P.E. ; Lundstrom, M.S. ; Melloch, M.R.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A n-p-n bipolar transistor that will be comparable in performance to conventional heterostructure bipolar transistors, but will be far easier to manufacture, is described. The device features an n-GaAs:p+-GaAs emitter-base junction and makes use of bandgap shrinkage in the p+-GaAs to maintain high emitter injection efficiency. Measurements of bandgap shrinkage in p+-GaAs are reviewed. The DC performance of the new device, in terms of the current gain, is expected to be excellent
Keywords :
III-V semiconductors; energy gap; gallium arsenide; heterojunction bipolar transistors; DC performance; GaAs; bandgap narrowing; current gain; emitter injection efficiency; emitter-base junction; n-p-n bipolar transistor; n-p+ heteroface; Bipolar transistors; Conductive films; Doping profiles; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Photonic band gap; Pulp manufacturing; Weight control;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51039
