DocumentCode :
2210994
Title :
Detection of Photosystem I Reaction Centers using Chemically Derivatized High Electron Mobility Transistor
Author :
Eliza, S.A. ; Islam, S.K. ; Lee, I. ; Greenbaum, E. ; Ericson, M.N. ; Khan, M.A.
Author_Institution :
Tennessee Univ., Knoxville
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
1456
Lastpage :
1459
Abstract :
This paper presents for the first time a micro-sensor for detecting Photosystem I (PS I) reaction centers. In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers, Photosystems I and II (PS I and PS II). Photon capture triggers rapid charge separation and the conversion of light energy into an electric voltage across the nanometer-scale (~6 nm) reaction centers. AlGaN/GaN based high electron mobility transistors (HEMTs) show high current throughputs and greater sensitivity to surface charges. PS I molecules were chemically immobilized on the HEMT device and significant changes in the transistor characteristics were noticed. With zero gate bias and 5 V at drain terminal, drain current changes by about 5 mA for 6muL drop of PS I solution. The difference between light and dark measurements is ~0.8 mA. Test results demonstrate that this approach is a potential candidate for detection and characterization of biomolecular photodiodes -PS I reaction centers.
Keywords :
biomolecular electronics; high electron mobility transistors; microsensors; AlGaN-GaN; HEMT device; PS I molecules; biomolecular photodiodes; chemically derivatized high electron mobility transistor; electric voltage; light energy conversion; microsensor; oxygenic plants; photon capture; photosystem I reaction centers; photosystem II; rapid charge separation; surface charges; voltage 5 V; Aluminum gallium nitride; Chemicals; Energy capture; Gallium nitride; HEMTs; MODFETs; Photodiodes; Testing; Throughput; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1930-0395
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.4388688
Filename :
4388688
Link To Document :
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