A fully-integrated 900-MHz CMOS power amplifier for mobile RFID reader applications

Author

Han, Jeonghu ; Kim, Younsuk ; Park, Changkun ; Lee, Dongho ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon

fYear

2006

fDate

11-13 June 2006

Abstract

A 900-MHz linear power amplifier has been fabricated for ultra-high-frequency (UHF) radio frequency identification (RFID) reader applications using a 0.25-mum CMOS technology. An on-chip transmission-line transformer is used for output matching network. Input and inter-stage matching components, and RF chokes are fully integrated in the designed amplifier so that no external components are required. The power amplifier provides linear output power of 27 dBm at 920 MHz with a 2.5-V supply. Power-added-efficiency (PAE) at 1-dB-gain-compression point (P1dB) is 28 %. Gain flatness over the full UHF RFID band, which covers from 860 MHz to 960 MHz, is 1 dB

Keywords

CMOS integrated circuits; UHF power amplifiers; integrated circuit design; radiofrequency identification; radiofrequency integrated circuits; 0.25 micron; 1 dB; 2.5 V; 860 to 960 MHz; CMOS technology; UHF RFID band; linear power amplifier; mobile RFID reader; on-chip transmission-line transformer; output matching network; CMOS technology; Impedance matching; Inductors; Network-on-a-chip; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Radiofrequency identification; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651174

Filename

1651174