Title :
Characteristics of gradient TiO/sub 2//TiN films produced by oxidization of TiN using plasma immersion ion implantation (PIII-D) and physical vapor deposition (PVD)
Author :
Chen, J.Y. ; Huang, N. ; Leng, Y.X. ; Yang, P. ; Sun, H. ; Wang, J. ; Wan, G.J. ; Li, J. ; Leng, Y. ; Chu, P.K.
Author_Institution :
Dept. of Mater. Eng., Southwest Jiaotong Univ., Chengdu, China
Abstract :
Summary form only given. Surface modification is becoming an increasingly popular method to improve the multi-functionality, tribological and mechanical properties, semi-conductivity, as well as reliability of thin films and materials. Plasma-based deposition is an important and economical technique to modify existing materials for better requirement. We investigate and compare the characteristics of TiN films deposited using plasma immersion ion implantation-deposition (PIII-D) and physical vapor deposition (PVD). Two types of gradient TiO/sub 2//TiN/Si films were fabricated by oxidizing of TiN films at 620/spl deg/C for 20 minutes under an oxygen flow of 0.5 liter per minute. The microstructure, valence state, elemental distribution, and grain size were determined using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and transmission electron microscopy (TEM).
Keywords :
X-ray diffraction; X-ray photoelectron spectra; grain size; ion implantation; oxidation; plasma deposited coatings; plasma deposition; secondary ion mass spectra; silicon; surface treatment; titanium compounds; transmission electron microscopy; vapour deposited coatings; vapour deposition; 20 min; 620 degC; TiN; TiN films; TiO/sub 2/-TiN-Si; TiO/sub 2//TiN films; X-ray diffraction; X-ray photoelectron spectroscopy; elemental distribution; gradient TiO/sub 2//TiN/Si films; grain size; mechanical properties; microstructure; multi-functionality; oxidization; physical vapor deposition; plasma immersion ion implantation; plasma immersion ion implantation-deposition; plasma-based deposition; reliability; secondary ion mass spectroscopy; semi-conductivity; surface modification; thin films; transmission electron microscopy; tribological properties; valence state; Chemical vapor deposition; Mass spectroscopy; Materials reliability; Mechanical factors; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Semiconductor films; Tin; Transistors;
Conference_Titel :
Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on
Conference_Location :
Banff, Alberta, Canada
Print_ISBN :
0-7803-7407-X
DOI :
10.1109/PLASMA.2002.1030535
