Studies of radiation damage in silicon microstrip detectors for the DØ silicon tracker

Volume

2

fYear

1995

fDate

21-28 Oct 1995

Firstpage

867

Abstract

This is a report on the current studies performed by the DØ Collaboration at Fermilab (Batavia, IL) on the radiation damage issues relevant to the development of Silicon Vertex Detectors. A short description of the irradiation facility that has been implemented at Fermilab is presented, followed by an overview of the Silicon Tracker characteristics and an estimate of the radiation levels expected during its operation. Preliminary results of two proton irradiation tests show no damage to coupling capacitors and polysilicon resistors. A short term damage constant of (5.9±1.0)×10^-17 A/cm was found for the leakage current. Interstrip resistance is greatly reduced after a proton fluence of (1.54±0.24)×10¹³ cm ^-2

Keywords

leakage currents; position sensitive particle detectors; proton effects; silicon radiation detectors; DØ silicon tracker; Si; Silicon Tracker characteristics; Silicon Vertex Detectors; coupling capacitors; interstrip resistance; leakage current; polysilicon resistors; proton irradiation tests; radiation damage; short term damage constant; silicon microstrip detectors; Capacitors; Collaboration; Current measurement; Microstrip; Protons; Radiation detectors; Resistors; Silicon radiation detectors; Strips; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3180-X

Type

conf

DOI

10.1109/NSSMIC.1995.510406

Filename

510406