Title :
Nanoelectronic materials and devices as new opportunity
Author_Institution :
Stanford Univ., Stanford
Abstract :
Present and future perspectives of nanoelectronic materials and devices are discussed both in evolutionary and revolutionary "nano " electronics spaces. It is likely that the evolutionary progress in all front of silicon based CMOS will keep its pace despite a variety of technical challenges. The revolutionary nanoelectronics, such as nanowires and nanotubes, would propose unique values when engineering break-through for control of growth comes real.
Keywords :
integrated circuit technology; nanoelectronics; nanotube devices; nanowires; CMOS; engineering breakthrough; nanoelectronic devices; nanoelectronic materials; nanotubes; nanowires; revolutionary nanoelectronics; Circuits; Energy consumption; Germanium silicon alloys; III-V semiconductor materials; MOSFETs; Nanoscale devices; Nanostructured materials; Nanowires; Nonvolatile memory; Silicon germanium;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388699
