DocumentCode :
2211238
Title :
3-D silicon technology for nano-electronics
Author :
Kim, Kinam ; Jung, Soon-Moon
Author_Institution :
Samsung Electron. Co. Ltd, Yongin
Volume :
1
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
84
Lastpage :
85
Abstract :
As the incumbent planar silicon technologies enter into deep nano scale dimension, it reveals many issues which are believed to be very difficult to be solved within incumbent technologies. Many exotic technologies seem to be not ready to take over the silicon technology. Thus the 3-D silicon technology is the only solution and fortunately in 3-D silicon technology the knowledge and experiences learned from 2-D planar technology over the 30 years can be fully utilized so that 3-D technology will be quickly established. Furthermore, when 3-D silicon technology facilitates with new materials and new concepts, 3-D silicon technology will be the center of technology in merging NT, BT, IT and others.
Keywords :
elemental semiconductors; nanoelectronics; silicon; 2D planar technology; 3D silicon technology; Si; Si - Element; deep nano scale dimension; nanoelectronics; planar silicon technologies; Biomedical optical imaging; Capacitors; Data processing; Isolation technology; Lithography; Random access memory; Semiconductor device noise; Silicon; Stacking; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
Type :
conf
DOI :
10.1109/NMDC.2006.4388700
Filename :
4388700
Link To Document :
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