• DocumentCode
    2211325
  • Title

    A miniature 15-50-GHz medium power amplifier

  • Author

    Chuang, Mei-Chen ; Wu, Pei-Si ; Lei, Ming-Fong ; Wang, Huei ; Wang, Yu-Chi ; Wu, Chan Shin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
  • fYear
    2006
  • fDate
    11-13 June 2006
  • Abstract
    A miniature power amplifier, which combines two conventional distributed amplifiers and a single transistor amplifier is designed to achieve wide bandwidth, high gain and moderate output power from 15 to 50 GHz. This circuit was fabricated using 0.15-mum GaAs based pHEMT MMIC technology. The measured small signal gain is 21plusmn1.5dB from 15 to 50 GHz, and the output saturated power is 18-22 dBm from 18 to 50 GHz with a miniature size of 1.5 times 1 mm2
  • Keywords
    III-V semiconductors; MMIC power amplifiers; distributed amplifiers; gallium arsenide; high electron mobility transistors; millimetre wave power amplifiers; 0.15 micron; 1 mm; 1.5 mm; 15 to 50 GHz; 18 to 50 GHz; GaAs; distributed amplifiers; miniature power amplifier; pHEMT MMIC technology; single transistor amplifier; Bandwidth; Circuits; Distributed amplifiers; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power generation; Power measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-9572-7
  • Type

    conf

  • DOI
    10.1109/RFIC.2006.1651181
  • Filename
    1651181