Title :
Linear RF polar modulated SiGe Class E and F power amplifiers
Author :
Kitchen, Jennifer Desai ; Deligoz, Ilker ; Kiaei, Sayfe ; Bakkaloglu, Bertan
Author_Institution :
Dept. of Electr. Eng., Connection One Res. Center, Tempe, AZ
Abstract :
Two fully-integrated linearized polar modulated class E and F power amplifiers (PA) with switch-mode supply modulation are presented. The PAs are implemented in a 0.18mum SiGe BiCMOS process and can be used to transmit varying envelope RF signals operating at 870-920MHz. The class E PA gives a peak output power of 26.4dBm and a maximum efficiency of 62%. The class F PA gives peak output power of 23dBm with 53 % drain efficiency. When using delta modulation to control the switch-mode supply, the class F and E polar amplifiers give ACPRs for an EDGE input waveform (at 400kHz offset) of -46dBc and -37.7dBc respectively
Keywords :
BiCMOS integrated circuits; UHF power amplifiers; delta modulation; switched mode power supplies; 0.18 micron; 400 kHz; 870 to 920 MHz; BiCMOS process; SiGe; class E polar amplifiers; class F polar amplifiers; delta modulation; linear RF polar modulated power amplifiers; switch-mode supply modulation; Bandwidth; Delta modulation; Germanium silicon alloys; Low pass filters; Power amplifiers; Power generation; RF signals; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651182
