Title :
High power LDMOS integrated Doherty amplifier for W-CDMA
Author :
Blednov, I.I. ; Van der Zanden, Jos
Author_Institution :
Philips Semicond.
Abstract :
To our knowledge a first integrated Doherty amplifier in a standard SOT502 package has been developed for WCDMA applications. This solution is based on 10W MMIC Doherty cell combined in parallel. The MMIC is based on the latest Philips LDMOST technology (Gen 6) and showed state of the art performance: 42% Eff has been measured at IMD3 level of -40dBc. Further improvement of linearity to below -50dBc was provided by digital pre-distortions. We believe this approach can be used to achieve powers above 120W. Moreover this approach will lead to a lower cost, more reliable and manufacturable Doherty product
Keywords :
MMIC power amplifiers; code division multiple access; semiconductor device packaging; 10 W; Doherty amplifier; LDMOS; MMIC; W-CDMA; standard SOT502 package; Costs; High power amplifiers; Impedance; Linearity; MMICs; Multiaccess communication; Power amplifiers; Power system reliability; Semiconductor device packaging; Standards development;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651183
