Title :
High pressure deuterium annealing effect on nano- scale CMOS devices with different channel width
Author :
Sung-Man Cho ; Jeong-Hyn Lee ; Chang, Mingchao ; Jo, M.-S. ; Hwang, H.-S. ; Lee, Jae-Kyung ; Jong-Ho Lee
Author_Institution :
Sch. of Electron. & Electr. Eng. & Comput. Sci., KyungPook Nat. Univ., Daegu
Abstract :
High pressure deuterium annealing was applied to nano-scale CMOS devices which has Plasma Nitride Oxidation (PNO) gate oxide. The annealing effect was characterized in terms of different sizes, charge pumping, hot carrier and NBTI stress, and /f noise for the first time. The characteristics of NMOS were improved by the annealing. But PMOS has only improved NBTI characteristic. Devices with narrow channel width shown more significant effect than wide channel devices.
Keywords :
CMOS integrated circuits; annealing; nanotechnology; NBTI stress; PNO; charge pumping; different channel width; high pressure deuterium annealing effect; nanoscale CMOS devices; plasma nitride oxidation gate oxide; Annealing; Charge pumps; Deuterium; Hot carriers; Nanoscale devices; Niobium compounds; Oxidation; Plasma devices; Plasma properties; Titanium compounds; 1/f noise; Charge pumping; High Pressure Deuterium Annealing; Hot carreir stress; NBTI; Nano-scale CMOS;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388705
