Title :
Counting statistics of single electron transport through a double quantum dot
Author :
Fujisawa, Toshimasa
Abstract :
Here, we discuss counting statistics of single-electron tunneling in a double quantum dot (DQD). Individual electron tunneling events are recorded with a quantum point contact (PC) acting as a charge sensor (Fujisawa, et. al., 2006). Forward and reverse tunneling events are detected in a real time scale, which allows us to perform statistical analysis on the transport through a DQD. Analyses in frequency and time domains as well as higher-order moments of noise reveal anti-bunching effect and sub-poissonian statistics of single electron transport. Moreover, the device works as a sensitive atto-ampare current meter by counting tunneling events (Fujisawa, et. al., 2006).
Keywords :
semiconductor quantum dots; single electron devices; statistical analysis; DQD; atto ampare current meter; charge sensor; counting statistics; double quantum dot; quantum point contact; real time scale; single electron transport; single electron tunneling; statistical analysis; Electrons; Event detection; Fluctuations; Frequency domain analysis; Laboratories; Quantum dots; Statistical analysis; Statistics; Time domain analysis; Tunneling;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388708