DocumentCode
2211449
Title
Time-resolved investigation of pulsed-DC magnetron reactive plasma
Author
Belkind, A. ; Becker, K. ; Freilish, A. ; Zhao, Z.
Author_Institution
Stevens Inst. of Technol., Hoboken, NJ, USA
fYear
2002
fDate
26-30 May 2002
Firstpage
264
Abstract
Summary form only given, as follows. DC reactive sputter deposition of dielectric films can be greatly affected by arcing. Observations have indicated that arcing is due to breakdown of the dielectric (oxide) film, which grows on the surface of the metal target as a result of positive charge accumulation. The use of pulsed-DC power in the pulsing frequency range of 20-350 kHz has been employed to reduce or eliminate arcing. Using duty cycles, which could be varied between 50% and 90%, plasma dynamics were studied. The relationships between various deposition process parameters (power, pressure, pulsing frequency, duty cycle, etc.) were studied using time-resolved general electrical, Langmuir probe and optical emission measurement techniques and the results are discussed.
Keywords
Langmuir probes; arcs (electric); dielectric thin films; plasma chemistry; plasma diagnostics; plasma materials processing; sputtering; 20 to 350 kHz; DC reactive sputter deposition; Langmuir probe; arcing; breakdown; deposition process; dielectric films; dielectric oxide film; duty cycles; electrical measurement; optical emission measurement; plasma dynamics; positive charge accumulation; pulsed-DC magnetron reactive plasma; pulsed-DC power; time-resolved investigation; Annealing; Bonding; Chemical vapor deposition; Dielectric breakdown; Dielectric films; Fluid flow; Optical films; Plasma density; Plasma measurements; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on
Conference_Location
Banff, Alberta, Canada
Print_ISBN
0-7803-7407-X
Type
conf
DOI
10.1109/PLASMA.2002.1030548
Filename
1030548
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