Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Author

Jo, Sung Hyun ; Lu, Wei

Author_Institution

Univ. of Michigan, Ann Arbor

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

116

Lastpage

117

Abstract

Nanoscale Ag/a-Si:H/c-Si based resistive switching nonvolatile memory devices have been fabricated and examined with active areas down to 50*50 nm². Close to 100% device yield was achieved without high voltage forming. The on/off resistance ratio increases as the device size is reduced, while the on-state resistance is insensitive to the device size down the smallest scales. This nanoscale resistive switching structure offers the potential as ultra-high density crossbar non-volatile memory devices. In the on-state, a rectifying I-V behavior was observed, a property desirable for large scale integration.

Keywords

large scale integration; memory architecture; switching circuits; large scale integration; nanoscale resistive switching structure; on-off resistance ratio; rectifying I-V behavior; resistive switching nonvolatile memory devices; ultrahigh density crossbar; Electrodes; Fabrication; Lithography; Nanoscale devices; Nonvolatile memory; Random access memory; Read-write memory; Scalability; Substrates; Threshold voltage; Crossbar; Nonvolatile Memory; Resistive Switching; a-Si;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388711

Filename

4388711