Fabrication and characterization of GaAs/AlGaAs planar resonant tunneling transistor

Author

Son, SeungHun ; Lee, Jungil ; Park, Yongju ; Yu, YunSeop ; Hwang, Sungwoo ; Ahn, Doyal

Author_Institution

Korea Univ., Seoul

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

118

Lastpage

119

Abstract

We have demonstrated electron transport in enhancement mode in-plane-gate (IPG) quantum dot (QD) transistors. A deep etched trench allows a large positive bias on the IPG, with negligible leakage current. Such enhancement mode operation has made it possible to populate ultra-small QDs with electrons. Strong NDR peaks and SET are observed in a wide gate bias window. The position of the NDR peaks systematically moves with the change of gate bias until, and also after the SET regime is reached. The size of the QD is estimated from the SET data, giving quantum energy level spacing consistent with the evolved NDR positions.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling transistors; semiconductor quantum dots; single electron transistors; GaAs-AlGaAs; GaAs-AlGaAs - Interface; GaAs/AlGaAs planar resonant tunneling transistor; QD transistors; deep etched trench; electron transport; enhancement mode operation; in-plane-gate quantum dot transistors; quantum energy level spacing; single electron transistors; Capacitance; Electrons; Energy states; Etching; Fabrication; Gallium arsenide; Quantum computing; Quantum dots; Resonant tunneling devices; Transistors; In-plane-gate; QD; SET; resonant tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388712

Filename

4388712