Title :
High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner
Author :
Kim, Jedon ; Oh, Hansu ; Chung, Chulho ; Jeong, Joo-Hyun ; Lee, HyunWoo ; Hwang, Seok-Hee ; Hwang, In-Chul ; Kim, Young-jin ; Hong, Kyushik ; Jung, Eunseung ; Suh, Kwang-Pyuk
Author_Institution :
Syst. LSI Bus., Samsung Electron. Co. Ltd., Kyunggi-Do
Abstract :
We report a high performance NPN bipolar junction transistor (BJT) processed in standard CMOS process that is applied to realize the direct conversion GSM receiver and DVB-H tuner. Through the variation of the base doping profile, performance of the NPN BJT has been tailored to meet the requirements of the RF circuits. Careful optimization is performed using both simulation and experiment. Optimized NPN BJT has maximum current gain of ~44, collector-emitter breakdown voltage of ~7V, collector-base breakdown voltage of ~20V, early voltage of ~25V, cutoff frequency of ~8.0GHz, and maximum oscillation frequency of ~11.6GHz. Low frequency noise characteristics of the NPN BJTs are investigated and the best structure for low noise level is identified. The corner frequency of the 1/f noise is ~2kHz at a collector current of ~1.7mA, which is ~4 orders lower than that of NMOS. As the flicker noise level is much lower than the CMOS, NPN BJT is used to realize the zero intermediate frequency (ZIF) direct conversion receiver (DCR) for GSM transceiver and DVB-H tuner. The resulting GSM receiver chain has a gain of over 50dB and noise figure of 2.5-3.0dB. For DVB-H tuner operating in the range of 470-850MHz, NF of 4.5dB and IIP3 of -5dBm are achieved at a gain of 64dB
Keywords :
1/f noise; bipolar transistors; cellular radio; digital video broadcasting; flicker noise; semiconductor device noise; transceivers; tuning; 1/f noise; 2.5 to 3.0 dB; 4.5 dB; 470 to 850 MHz; 64 dB; CMOS process; DVB-H tuner; GSM transceiver; NPN bipolar junction transistors; base doping profile; flicker noise level; zero intermediate frequency direct conversion receiver; 1f noise; CMOS process; Cutoff frequency; Digital video broadcasting; Doping profiles; GSM; Low-frequency noise; Radio frequency; Transceivers; Tuners;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651191